Room-temperature ferromagnetism in diluted magnetic semiconductor Pb1−xCrxTe

Room-temperature ferromagnetism in a II-VI diluted magnetic semiconductor Zn(1-x)Cr(x)Te.

The magnetic and magneto-optical properties of a Cr-doped II-VI semiconductor ZnTe were investigated. Magnetic circular dichroism measurements showed a strong interaction between the sp carriers and localized d spins, indicating that Zn(1-x)Cr(x)Te is a diluted magnetic semiconductor. The Curie temperature of the film with x=0.20 was estimated to be 300+/-10 K, which is the highest value ever r...

Theory of diluted magnetic semiconductor ferromagnetism

We present a theory of carrier-induced ferromagnetism in diluted magnetic semiconductors ( III1-xMnxV) which allows for arbitrary itinerant-carrier spin polarization and dynamic correlations. Both ingredients are essential in identifying the system's elementary excitations and describing their properties. We find a branch of collective modes, in addition to the spin waves and Stoner continuum w...

High-temperature ferromagnetism in Ni2+-doped ZnO aggregates prepared from colloidal diluted magnetic semiconductor quantum dots.

Ferromagnetism with T(c)>350 K is observed in the diluted magnetic semiconductor Ni(2+):ZnO synthesized from solution. Whereas colloidal Ni(2+):ZnO nanocrystals are paramagnetic, their aggregation gives rise to robust ferromagnetism. The appearance of ferromagnetism is attributed to the increase in domain volumes and the generation of lattice defects upon aggregation. The unusual temperature de...

Transition Metal-Doped Oxide Semiconductor Exhibiting Room-Temperature Ferromagnetism

Coherently photoinduced ferromagnetism in diluted magnetic semiconductors.

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation. The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T(C) depends both on the properties of the material and on the freque...